Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells

Large negative thermal quenching (NTQ) of the yellow luminescence (YL) for a temperature increase from 5 to 300 K is observed in non-polar InGaN/GaN quantum well (QW) samples due migration carriers InGaN QW layers GaN barrier first time. Such an unusual phenomenon happens only when are optically excited inside layers, providing solid evidence occurrence transfer photoexcited layers. A simple model considering proposed interpret NTQ phenomenon. The activation energy determined by fitting reciprocal dependence YL intensity Arrhenius plot with model.